專門用于碳化硅(SiC)氮化鎵(GaN)器件的離子注入后退火工藝,采用特殊的無金屬加熱設(shè)計使加工溫度提高到2000℃。 適用工藝:SiC和GaN晶圓的退火
產(chǎn)品特點/Product Characteristics:
? 采用立式結(jié)構(gòu)、工藝控制好、溫度分布均勻、氣流穩(wěn)定
The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
? Robot 自動傳送
Robot Auto Transfer
? 多點控溫,溫度均勻
Multi-point temperature control, uniform temperature
? 具有多種報警功能及設(shè)備保護(hù)功能
Has various alarm functions and facility protection functions
技術(shù)指標(biāo)/Technical Indicators:
? 晶片尺寸:6-8英寸
Wafer size: 6-8 inches
? 制程溫度范圍: 800-2000 °C
Process temperature range: 800-2000°C
? 批次片數(shù): 50-75片
Batch capacity: 50-75 pcs
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